PENGARUH ALUR SUHU TERHADAP KUALITAS KRISTAL Sn(Se0,8Te0,2) HASIL PREPARASI DENGAN TEKNIK BRIDGMAN UNTUK APLIKASI SEL SURYA STREAM OF TEMPERATURE CRYSTAL Sn(Se0.8 Te0.2) QUALITY EFFECT ON PREPARATION OUTCOME THROUGH BRIDGMAN TECHNIQUE FOR SOLAR CELL

Anggraeni Kumala Dewi,
Ariswan Ariswan,

Abstract


Abstrak
Penelitian ini bertujuan untuk mengetahui pengaruh alur suhu terhadap kualitas struktur kristal, morfologi permukaan, dan komposisi kimia kristal Sn(Se0,8Te0,2) yang terbentuk. Penumbuhan kristal Sn(Se0,8Te0,2) diperoleh dari hasil preparasi dengan Teknik Bridgman. Pada keempat sampel kristal Sn(Se0,8Te0,2) dilakukan variasi alur suhu. Alur suhu sampel I pada suhu 350°C dikonstankan selama 3 jam kemudian suhu 600°C dikonstankan selama 3 jam. Alur suhu sampel II pada suhu 350°C dikonstankan selama 2 jam kemudian suhu 600°C dikonstankan selama 4,5 jam. Alur suhu sampel III pada suhu 350°C dikonstankan selama 6 jam kemudian suhu 600°C dikonstan selama 1 jam. Alur suhu sampel IV pada suhu 350°C dikonstankan selama 5 jam kemudian suhu 600°C dikonstankan selama 6 jam. Selanjutnya dikarakterisasi menggunakan XRD (X-Ray Diffraction) untuk mengetahui struktur kristal, SEM (Scanning Electron Microscopy) untuk mengetahui morfologi permukaan, dan EDAX (Energy Dispersive Analysis of X-ray) untuk mengetahui komposisi kimia. Hasil karakterisasi XRD pada keempat sampel menunjukkan kristal Sn(Se0,8Te0,2) memiliki struktur orthorombik, dengan sampel I dan III memiliki intensitas yang paling tinggi. Hasil karakterisasi SEM pada sampel I dan III menunjukkan bahwa terbentuknya kristal Sn(Se0,8Te0,2) ditandai dengan adanya butiran-butiran atau grain. Berdasarkan hasil EDAX, diketahui bahwa kristal Sn(Se0,8Te0,2) mengandung unsur Sn, Se, dan Te dengan persentase komposisi kimia pada sampel I Sn = 39,85 %, Se = 36,09 %, dan Te = 2,57 %. Perbandingan molaritas pada sampel I Sn : Se : Te adalah 1 : 0,90 : 0,10.
Kata kunci: Alur Suhu, Semikonduktor, Kristal Sn(Se0,8Te0,2), Teknik Bridgman
Abstract
This study aims determine stream of temperature crystal Sn(Se0.8 Te0.2) quality effect, morphology surface, and chemical composition of crystal Sn(Se0.8 Te0.2). The growth of crystal Sn(Se0.8 Te0.2) is obtained by preparation outcome through Bridgman Technique. In the fourth crystalline samples Sn(Se0.8 Te0.2) are variated by stream of temperature. Stream of temperature on the sample I is heated at 350 ° C which is constanted for 3 hours then 600 ° C is constanted for 3 hours. Stream of temperature on the sample II is heated at 350 ° C which is constanted for 2 hours then 600 ° C is constanted for 4.5 hours. Stream of temperature on the sample III is heated 350 ° C which is constanted for 6 hours then 600 ° C is constanted for 1 hour. Stream of temperature on the sample IV is heated at 350 ° C which is constanted for 5 hours then 600 ° C is constanted for 6 hours. Hence, characterized by using XRD (X-Ray Diffraction) for to determine the crystal structure, SEM (Scanning Electron Microscopy) to determine the surface morphology, and EDAX (Energy Dispersive Analysis of X-ray) to determine the chemical composition. The four samples are characterized results indicate that crystal Sn(Se0.8 Te0.2) has orthorhombic structure with the results of the samples I and III have the highest intensity. SEM characterization result for sampel I and III indicate that the formation of crystalline Sn(Se0.8 Te0.2) is characterized by the presence of grains. Based on the results of EDAX, it is known that the crystal Sn(Se0.8 Te0.2) contains elements of Sn, Se, and Te with a percentage of the chemical composition of the sample I is Sn = 39.85%, Se = 36.09%, and Te = 2,57 %. Comparison the molarity of the sample I is Sn: Se: Te is 1: 0.90: 0.10.
Keywords: Stream of Temperature, Semiconductor, Crystal Sn Sn(Se0.8 Te0.2), Bridgman Technique

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DOI: https://doi.org/10.21831/fisika%20-%20s1.v6i2.6905

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