PENGARUH VARIASI MASSA BAHAN TERHADAP KUALITAS KRISTAL SEMIKONDUKTOR Sn(Se0,2Te0,8) HASIL PREPARASI DENGAN TEKNIK BRIDGMAN THE EFFECT OF MATERIAL MASS ON THE QUALITY OF SEMICONDUCTOR CRYSTALS Sn(Se0,2Te0,8) PREPARATION RESULTS USING BRIDGMAN METHOD

Abstract

Abstrak

Penelitian ini bertujuan untuk mengetahui pengaruh massa bahan terhadap kualitas kristal semikonduktor dan mengetahui struktur, parameter kisi, morfologi permukaan serta komposisi kimia dalam kristal Sn(Se_0,2Te_0,8). Penumbuhan kristal dilakukan menggunakan teknik Bridgman dengan melakukan variasi massa bahan. Massa bahan Sn divariasi sebanyak empat kali, yaitu 0,9 gram, 1 gram, 1,1 gram, dan 1,2 gram. Keempat sampel dipanaskan dengan alur pemanasan yang sama selama 18 jam untuk suhu 350° C, dan 600° C selama 12 jam. Kristal hasil preparasi dikarakterisasi menggunakan XRD, SEM  dan EDAX. Hasil XRD menujukkan bahwa variasi massa dapat mempengaruhi kualitas kristal dilihat dari tingkat keteraturan atom dan struktur kristal yang terbentuk adalah kubik. Hasil perhitungan analitik parameter kisi kristal, sampel I sebesar a = b = c = Å, sampel II sebesar a = b = c = Å, sampel III sebesar a = b = c = Å, dan sampel IV sebesar a = b = c = Å. Hasil SEM dan EDAX menunjukkan morfologi permukaan dari sampel I dan sampel II sudah terbentuk kristal, dengan perbandingan molar Sn : Se : Te untuk sampel I adalah 1 : 0,1 : 0,8 dan sampel II dengan perbandingan 1 : 0,01 : 0,6.

Kata kunci: Semikonduktor, Teknik Bridgman, Struktur Kristal

ABSTRACT

This research aims to know the effect of material mass on the quality of semiconductor crystals Sn(Se_0,2Te_0,8), the structure, parameters of crystal lattice, the surface morphology and chemical composition in crystals Sn(Se_0,2Te_0,8). The crystal growing technique used in this study is the Bridgman technique by varying the mass of the material. For the first sample, the Sn mass used is 0.9 grams, for the second sample was 1 gram, third sample was 1.1 grams, and the fourth sample was 1.2 grams. The four samples were heated with the same heating flow and the heating process for each sample was carried out for 18 hours for 350° C, then 600° C for 12 hours. The result of the crystals were then characterized using XRD, SEM and EDAX. The result of characterization shows that the mass variation can affect the quality of the crystal seen from the atomic order level and the crystal structure of the four samples are cubic. The lattice parameters of the first sample were a = b = c = 6,310 Å, the second sample were a = b = c = 6,310 Å, the third sample were a = b = c = 6,310 Å, and the fourth sample were a = b = c = 6,310 Å. From the result of SEM and EDAX characterization it can be seen that the surface morphology indicates that crystal has been formed and showed that both samples contained Sn, Se and Te with molar ratio Sn: Se: Te for the first sample was 1: 0.1: 0,8 and the second sample was 1: 0,01: 0,6.

Keywords: Semiconductor, Bridgman Method, Crystal’s structure