PENGARUH TEMPERATUR SUBSTRAT PADA KUALITAS KRISTAL LAPISAN TIPIS Sn(〖Se〗_(0,8) 〖Te〗_(0,2)) HASIL PREPARASI DENGAN TEKNIK EVAPORASI VAKUM THE EFFECT OF SUBSTRATE TEMPERATURE ON QUALITY OF CRYSTAL Sn(〖Se〗_(0,8) 〖Te〗_(0,2)) THIN FILMS PREPARATION RESULT BY VACUUM EVAPORATION TECHNIQUE

Abstract

Abstrak

Penelitian ini bertujuan untuk menumbuhkan lapisan tipis Sn( ) dengan teknik evaporasi vakum pada berbagai variasi temperatur substrat untuk mempelajari karakterisasi struktur kristal, morfologi permukaan, dan komposisi kimia. Proses preparasi lapisan tipis Sn( ) dilakukan menggunakan teknik evaporasi vakum yang bekerja pada tekanan ~ mbar dengan melakukan variasi temperatur substrat sebanyak 3 kali, yaitu 150 ˚C, 250 ˚C, dan 350 ˚C. Setelah sampel lapisan tipis Sn( ) dihasilkan, kemudian sampel dikarakterisasi menggunakan XRD (X-Ray Diffraction) untuk mengetahui struktur kristal dan parameter kisi kristal, SEM (Scanning Electron Microscopy) untuk mengetahui morfologi permukaan kristal, dan EDAX (Energy Dispersive Analysis X-Ray) untuk mengetahui komposisi kimia. Hasil karakterisasi XRD berupa difaktogram menunjukkan bahwa kristal pada lapisan tipis Sn( ) yang terbentuk berstruktur ortorombik, dengan nilai parameter kisi pada sampel 1 a = 11, 39;b = 4,39;c = 4,37, sampel 2 a = 11, 72;b = 4,28;c = 4,65; dan sampel 3 a = 11, 42;b = 4,19;c = 4,46. Hasil karakterisasi SEM memperlihatkan bahwa, kristal lapisan tipis Sn( ) sampel 3 memiliki keseragaman struktur, bentuk, dan warna butir kecil-kecil yang lebih teratur dibandingkan sampel 1 dengan diameter lapisan tipis sampel 1 0,299 µm dan sampel 3 0,295 µm. Berdasarkan hasil EDAX , lapisan tipis Sn( ) mengandung unsur Sn,Se,Te dengan persentase komposisi kimia pada sampel 1 Sn = 49,57%, Se = 44,46%, Te = 5,97% dan pada sampel 3 Sn = 49,66%, Se = 41,28%, Te = 9,06%. Perbandingan molaritas Sn : Se : Te pada sampel 1 1 : 0,89 : 0,12 dan sampel 3 1 : 0 : 83 : 0,18.

Kata kunci: lapisan tipis, teknik evaporasi vakum, struktur kristal

Abstrack

This research aims to grow Sn( ) thin films by vacuum evaporation technique at substrate temperature variations to study characterization of Sn( ) thin films as semiconductor materials that includes characterization of the crystal structure, surface morphology, and chemical composition. The preparation process of Sn( ) thin films were performed using vacuum evaporation technique that worked on pressure ~  mbar with three substrate  temperature variations, i.e 150 ˚C, 250 ˚C, 350 ˚C. After thin films preparation had finished, samples were characterized by XRD (X-Ray Diffraction) to determinate the crystal structure and the lattice parameters, SEM (Scanning Electron Microscopy) to determine the surface morphology, and EDAX (Energy Dispersive Analysis X-Ray) to determine the chemical composition. The result of XRD characterization shows that diffractogram from crystalline of the Sn( ) thin film had orthorhombic crystal structure with the values of lattice parameters, on sample 1 a = 11, 39; b = 4,39; c = 4,37; sample 2 a = 11, 72; b = 4,28; c = 4,65; and sample 3 a = 11, 42; b = 4,19; c = 4,46. SEM characterization shows that sample 3 had uniformity of the shape, structure, and color of grains more organized than sample 1 with 0,299 µm thickness on sample 1and 0,295 µm on sample 3. Based the result of EDAX, Sn( ) thin films contained elements of Sn, Se, Te with the chemical composition percentages were Sn = 49,57%, Se = 44,46%, Te = 5,97% on sample 1 and Sn = 49,66%, Se = 41,28%, Te = 9,06% on sample 3. So, the molarity compositions of Sn : Se : Te on sample 1 were 1 : 0,89 : 0,12 and 1 : 0 : 83 : 0,18 on sample 3.

Keywords: thin films, vacuum evaporation technique, crystal structure