STUDI TENTANG STRUKTUR DAN KOMPOSISI KIMIA LAPISAN TIPIS Sn(S0.6Te0.4) HASIL PREPARASI DENGAN TEKNIK EVAPORASI VAKUM UNTUK APLIKASI SEL SURYA STUDY ON THE STRUCTURE AND CHEMICAL COMPOSITION OF Sn(S0.6Te0.4) THIN FILMS PREPARATION RESULTS BY VACUUM EVAPORATION TECHNIQUE FOR SOLAR CELL APPLICATION
Abstract
Abstrak
Penelitian ini bertujuan untuk mengetahui pengaruh temperatur substrat terhadap kualitas lapisan tipis, mengetahui struktur dan parameter kisi, dan mengetahui morfologi permukaan, serta komposisi kimia lapisan tipis Sn(S0,6Te0,4) yang dipreparasi menggunakan teknik evaporasi vakum. Preparasi dilakukan pada tekanan 7 ×105 mbar dengan 3 variasi temperatur substrat, yaitu 250ºC, 300ºC dan 350ºC. Karakterisasi XRD menunjukkan bahwa lapisan tipis Sn(S0,6Te0,4) memiliki struktur kristal orthorombik. Nilai parameter kisi sampel 1 (temperatur substrat 250ºC) adalah a = 4,30 Å, b = 10,4 Å dan c = 4,01 Å, sampel 2 (temperatur substrat 300ºC) adalah a = 4,29 Å, b = 11,9 Å dan c = 4,19 Å dan sampel 3 (temperatur substrat 350ºC) adalah a = 4,23 Å, b = 11,19 Å dan c = 4,03 Å. Hasil difaktogram menunjukkan bahwa variasi temperatur substrat menyebabkan adanya perbedaan intensitas puncak yang menyatakan keteraturan susunan atom-atom penyusun lapisan tipis. Karakterisasi SEM menunjukkan permukaan dari lapisan tipis Sn(S0,6Te0,4) memiliki butiran (grain) yang berbentuk lonjong dan permukaan yang homogen terlihat dari bentuk dan warna kristal yang seragam serta memiliki ukuran rata-rata partikel, yaitu 0,074 μm. Karakterisasi EDS, pada lapisan tipis Sn(S0,6Te0,4) memiliki perbandingan persentase komposisi kimia bahan dasarnya, yaitu unsur Sn = 51,87%, S = 28,41%, Te = 19,72%. Perbandingan molaritas semikonduktor Sn : S : Te yaitu 1 : 0,55 : 0,38.
Kata kunci: lapisan tipis Sn(S0,6Te0,4), semikonduktor, evaporasi vakum
Abstract
The research aimed to grow Sn(S0,6Te0,4) thin films by vacuum evaporation technique at substrate temperature variations, to know characterization of Sn(S0,6Te0,4) thin films as semiconductor materials that included characterization of the crystal structure, surface morphology, and chemical composition. The preparation were performed on 7 ×10-5 mbar pressure with substrate temperature variations (250ºC, 300ºC and 350ºC). The result of XRD characterization showed that Sn(S0,6Te0,4) thin films which is shaped orthorhombic crystal structure. Lattice parameter of sample 1 (250ºC substrate temperature) is a = 4,30 Å, b = 10,4 Å and c = 4,01 Å, sample 2 (300ºC substrate temperature) a = 4,29 Å, b = 11,9 Å and c = 4,19 Å and sample 3 (350ºC substrate temperature) were a = 4,23 Å, b = 11,19 Å and c = 4,03 Å. The result of diffractograms showed that the substrate temperature variations caused the diversification of peak spectrum intensities which showed the regularity of atoms. The results of SEM characterization showed that the surface morphology of Sn(S0,6Te0,4) thin films consisted of oval grains with homogeneous structure marked by the uniformity of shape and colour with about 0,074 μm particle size. The result of EDS characterization, contained elements of Sn, S, and Te with the chemical composition percentages were Sn = 51,87%, S = 28,41% and Te = 19,72%. So, the molarity comparisons of Sn : S : Te was 1 : 0,55 : 0,38.
Keywords: Sn(S0,6Te0,4) thin films, semiconductor, vacuum evaporation
Penelitian ini bertujuan untuk mengetahui pengaruh temperatur substrat terhadap kualitas lapisan tipis, mengetahui struktur dan parameter kisi, dan mengetahui morfologi permukaan, serta komposisi kimia lapisan tipis Sn(S0,6Te0,4) yang dipreparasi menggunakan teknik evaporasi vakum. Preparasi dilakukan pada tekanan 7 ×105 mbar dengan 3 variasi temperatur substrat, yaitu 250ºC, 300ºC dan 350ºC. Karakterisasi XRD menunjukkan bahwa lapisan tipis Sn(S0,6Te0,4) memiliki struktur kristal orthorombik. Nilai parameter kisi sampel 1 (temperatur substrat 250ºC) adalah a = 4,30 Å, b = 10,4 Å dan c = 4,01 Å, sampel 2 (temperatur substrat 300ºC) adalah a = 4,29 Å, b = 11,9 Å dan c = 4,19 Å dan sampel 3 (temperatur substrat 350ºC) adalah a = 4,23 Å, b = 11,19 Å dan c = 4,03 Å. Hasil difaktogram menunjukkan bahwa variasi temperatur substrat menyebabkan adanya perbedaan intensitas puncak yang menyatakan keteraturan susunan atom-atom penyusun lapisan tipis. Karakterisasi SEM menunjukkan permukaan dari lapisan tipis Sn(S0,6Te0,4) memiliki butiran (grain) yang berbentuk lonjong dan permukaan yang homogen terlihat dari bentuk dan warna kristal yang seragam serta memiliki ukuran rata-rata partikel, yaitu 0,074 μm. Karakterisasi EDS, pada lapisan tipis Sn(S0,6Te0,4) memiliki perbandingan persentase komposisi kimia bahan dasarnya, yaitu unsur Sn = 51,87%, S = 28,41%, Te = 19,72%. Perbandingan molaritas semikonduktor Sn : S : Te yaitu 1 : 0,55 : 0,38.
Kata kunci: lapisan tipis Sn(S0,6Te0,4), semikonduktor, evaporasi vakum
Abstract
The research aimed to grow Sn(S0,6Te0,4) thin films by vacuum evaporation technique at substrate temperature variations, to know characterization of Sn(S0,6Te0,4) thin films as semiconductor materials that included characterization of the crystal structure, surface morphology, and chemical composition. The preparation were performed on 7 ×10-5 mbar pressure with substrate temperature variations (250ºC, 300ºC and 350ºC). The result of XRD characterization showed that Sn(S0,6Te0,4) thin films which is shaped orthorhombic crystal structure. Lattice parameter of sample 1 (250ºC substrate temperature) is a = 4,30 Å, b = 10,4 Å and c = 4,01 Å, sample 2 (300ºC substrate temperature) a = 4,29 Å, b = 11,9 Å and c = 4,19 Å and sample 3 (350ºC substrate temperature) were a = 4,23 Å, b = 11,19 Å and c = 4,03 Å. The result of diffractograms showed that the substrate temperature variations caused the diversification of peak spectrum intensities which showed the regularity of atoms. The results of SEM characterization showed that the surface morphology of Sn(S0,6Te0,4) thin films consisted of oval grains with homogeneous structure marked by the uniformity of shape and colour with about 0,074 μm particle size. The result of EDS characterization, contained elements of Sn, S, and Te with the chemical composition percentages were Sn = 51,87%, S = 28,41% and Te = 19,72%. So, the molarity comparisons of Sn : S : Te was 1 : 0,55 : 0,38.
Keywords: Sn(S0,6Te0,4) thin films, semiconductor, vacuum evaporation
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